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IRG8P08N120KD-EPBF

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IRG8P08N120KD-EPBF

IRG8P08N120 - DISCRETE IGBT WITH

Manufacturer: International Rectifier

Categories: Single IGBTs

Quality Control: Learn More

International Rectifier's IRG8P08N120KD-EPBF is a high-performance discrete IGBT designed for demanding power applications. This component features a robust 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 15 A, with a pulsed capability of 15 A. The device exhibits a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 5A collector current, ensuring efficient power conversion. With a maximum power dissipation of 89 W and a gate charge of 45 nC, it is optimized for fast switching with specified switching energies of 300 µJ (on) and 300 µJ (off) under test conditions of 600V, 5A, 47 Ohm, and 15V. The IRG8P08N120KD-EPBF is housed in a TO-247AD through-hole package, suitable for industrial automation, renewable energy systems, and power supply designs operating within a temperature range of -40°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)50 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 5A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C20ns/160ns
Switching Energy300µJ (on), 300µJ (off)
Test Condition600V, 5A, 47Ohm, 15V
Gate Charge45 nC
Current - Collector (Ic) (Max)15 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)15 A
Power - Max89 W

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