IRG7PSH50UDPBF
IRG7PSH50 - DISCRETE IGBT WITH AManufacturer: International Rectifier
Categories: Single IGBTs
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International Rectifier IRG7PSH50UDPBF is a high-performance Trench IGBT designed for demanding applications. This discrete power semiconductor features a 1200 V breakdown voltage and a continuous collector current capability of 116 A (150 A pulsed). With a maximum power dissipation of 462 W and a low on-state voltage (Vce(on)) of 2V at 15V Vge and 50A Ic, it offers efficient power handling. The device exhibits a gate charge of 440 nC and switching times of 35 ns turn-on and 430 ns turn-off at 25°C. Reverse recovery time is specified at 190 ns. Packaged in a PG-TO274-3-903 (TO-274AA) through-hole configuration and supplied in bulk, this IGBT is suitable for industrial motor drives, power supplies, and renewable energy systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 190 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| Supplier Device Package | PG-TO274-3-903 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 35ns/430ns |
| Switching Energy | 3.6mJ (on), 2.2mJ (off) |
| Test Condition | 600V, 50A, 5Ohm, 15V |
| Gate Charge | 440 nC |
| Current - Collector (Ic) (Max) | 116 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 462 W |
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