IRG4PSH71KDPBF
IRG4PSH71 - DISCRETE IGBT WITH AManufacturer: International Rectifier
Categories: Single IGBTs
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International Rectifier's IRG4PSH71KDPBF is a discrete Insulated Gate Bipolar Transistor (IGBT) designed for high voltage and current applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 78 A, with a pulsed current rating of 156 A. The IGBT offers a maximum power dissipation of 350 W and a low on-state voltage (Vce(on)) of 3.9 V at 15 V Vge and 42 A Ic. Its switching characteristics include a gate charge of 410 nC and switching energies of 5.68 mJ (on) and 3.23 mJ (off) under specific test conditions. The device is housed in a SUPER-247™ (TO-274AA) package for through-hole mounting and operates within a temperature range of -55°C to 150°C. This robust design makes it suitable for power switching applications in industries such as industrial motor drives and power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 107 ns |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 42A |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 67ns/230ns |
| Switching Energy | 5.68mJ (on), 3.23mJ (off) |
| Test Condition | 800V, 42A, 5Ohm, 15V |
| Gate Charge | 410 nC |
| Current - Collector (Ic) (Max) | 78 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 156 A |
| Power - Max | 350 W |
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