AUIRL1404S
PFET, 160A I(D), 40V, 0.004OHM,Manufacturer: International Rectifier
Categories: Single FETs, MOSFETs
Quality Control: Learn More
International Rectifier HEXFET® AUIRL1404S is an N-Channel Power MOSFET designed for high-current applications. This device features a continuous drain current capability of 160A (Tc) with a drain-to-source voltage (Vdss) of 40V. The low on-resistance (Rds On) of 4mOhm at 95A, 10V facilitates efficient power transfer. With a maximum power dissipation of 200W (Tc), the AUIRL1404S is suitable for demanding power management tasks. Key specifications include a gate charge (Qg) of 140 nC @ 5 V and input capacitance (Ciss) of 6600 pF @ 25 V. The AUIRL1404S is packaged in a TO-252AA (DPAK) surface mount configuration. This component is commonly utilized in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.3V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V |
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