TD8156H
Standard SRAM, 256X8, 400ns, HMOS, CDIP40Manufacturer: Intel
Categories: SRAMs
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The Intel TD8156H is a standard SRAM component organized as 256 words by 8 bits, offering a total memory density of 2 Kilobits. This HMOS technology device features a maximum access time of 400ns and operates synchronously with a maximum clock frequency of 2.500 MHz. It supports common I/O with 3-state output characteristics and an active output enable. The TD8156H is housed in a 40-terminal CDIP package (JESD-30 Code: R-CDIP-T40) with through-hole mounting. Operating within a temperature range of -40°C to +85°C, it requires a supply voltage between 4.5V and 5.5V, with a nominal value of 5V. Typical applications for this component include industrial control systems and legacy computing platforms.
Additional Information
Series: TD8156RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | HMOS |
| Access_Time_Max | 400.0000000000000000 |
| Clock_Frequency_Max | 2.50000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-CDIP-T40 |
| Memory_Density | 2048.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 3,(X6,X8) |
| Number_of_Terminals | 40 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Output_Enable | Yes |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Current_Max | 125.000000000000000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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