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TD8155H-2

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TD8155H-2

Standard SRAM, 256X8, 330ns, HMOS, CDIP40

Manufacturer: Intel

Categories: SRAMs

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Intel TD8155H-2 is a standard SRAM component from the TD8155 series, featuring a memory organization of 256 words by 8 bits. This HMOS technology device offers a maximum access time of 330ns and operates synchronously with a maximum clock frequency of 3.00000 MHz. Its 40-terminal CDIP package, specifically R-CDIP-T40, is designed for through-hole mounting. The memory density is 2048 bits. The component supports common I/O with 3-state output characteristics and has an output enable function. Operating within a temperature range of 0.0°C to 70.0°C, it requires a supply voltage between 4.5V and 5.5V, with a nominal voltage of 5V. The maximum supply current is 125.00 mA. This device finds application in industrial, telecommunications, and consumer electronics sectors requiring reliable memory solutions.

Additional Information

Series: TD8155RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyHMOS
Access_Time_Max330.0000000000000000
Clock_Frequency_Max3.00000
I_O_TypeCOMMON
JESD_30_CodeR-CDIP-T40
Memory_Density2048.0000000000000000
Memory_IC_TypeSTANDARD SRAM
Memory_Organization256X8
Memory_Width8
Number_of_Functions1
Number_of_Ports3,(X6,X8)
Number_of_Terminals40
Number_of_Words256.0000000000000000
Number_of_Words_Code256
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Output_EnableYes
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeDIP
Package_ShapeRectangular
Package_StyleIN-LINE
Parallel_SerialParallel
Supply_Current_Max125.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormTHROUGH-HOLE
Terminal_PositionDual

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