TD2147H2
Standard SRAM, 4KX1, 45ns, MOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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Intel TD2147H2 is a synchronous SRAM with a memory density of 4096 bits, organized as 4K x 1. This MOS technology component features an asynchronous operating mode and a maximum access time of 45ns. The TD2147H2 offers 3-state output characteristics and separate I/O. It operates with a nominal supply voltage of 5V, with a minimum standby voltage of 4.5V, and a maximum supply current of 180mA. This component is housed in an 18-terminal ceramic dual in-line package (CDIP18) with through-hole mounting and a terminal pitch of 2.54mm. The operating temperature range is from -40°C to 85°C. This device finds application in various industrial and commercial systems requiring reliable, high-speed memory.
Additional Information
Series: TD2147H2RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 45.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Standby_Voltage_Min | 4.500000 |
| Supply_Current_Max | 180.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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