TD2114AL-3
Standard SRAM, 1KX4, 150ns, NMOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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The Intel TD2114AL-3 is a standard SRAM component from the TD2114 series. This NMOS technology device offers a memory organization of 1K x 4 bits, with a total memory density of 4096 bits. It features an asynchronous operating mode and a maximum access time of 150ns. The component uses a 3-state output characteristic and is housed in a CDIP18 package (JESD-30 Code: R-GDIP-T18) with through-hole mounting terminals on a 2.54mm pitch. Operating within a supply voltage range of 4.5V to 5.5V, this device is suitable for applications requiring reliable, high-speed data storage in areas such as industrial control systems and legacy telecommunications equipment. The operating temperature range is -40°C to +85°C.
Additional Information
Series: TD2114RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.8600 |
| Width | 7.6200 |
| Technology | NMOS |
| Access_Time_Max | 150.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-GDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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