QP2114A6
Standard SRAM, 1KX4, 300ns, MOS, PDIP18Manufacturer: Intel
Categories: SRAMs
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Intel QP2114A6 is a standard SRAM with a 4Kb memory density, organized as 1K x 4 bits. This asynchronous MOS device features a maximum access time of 300ns and operates with a nominal supply voltage of 5V. The QP2114A6 offers 3-state outputs and utilizes through-hole mounting with a PDIP18 package. Its operating temperature range is specified from 0°C to 70°C. This component is suitable for applications in industrial control, telecommunications, and consumer electronics where reliable, standard memory is required.
Additional Information
Series: QP2114A6RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 300.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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