QD2149H
Standard SRAM, 1KX4, 70ns, NMOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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Intel QD2149H is a 4096-bit (1K x 4) NMOS Static Random Access Memory (SRAM) in the QD2149 series. This component features a maximum access time of 70 ns and operates with a common I/O. The device is packaged in an 18-lead Ceramic Dual In-line Package (CDIP), adhering to JESD-30 code R-GDIP-T18. It operates asynchronously with 3-state outputs and requires a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V. Typical applications include industrial control systems and legacy equipment where robust, asynchronous memory operation is critical. The QD2149H is a through-hole component with a terminal pitch of 2.54 mm.
Additional Information
Series: QD2149RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.8600 |
| Width | 7.6200 |
| Technology | NMOS |
| Access_Time_Max | 70.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-GDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Current_Max | 150.000000000000000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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