QD2147H-3
Standard SRAM, 4KX1, 55ns, NMOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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Intel QD2147H-3 is a standard SRAM with a 4K x 1 memory organization, providing a total density of 4096 bits. This NMOS technology device features a maximum access time of 55ns and operates asynchronously. The I/O type is separate, and the component offers automatic power-down functionality. Designed for through-hole mounting, it is housed in an 18-lead ceramic glass-sealed dual in-line package (CDIP18). The operating temperature range is 0°C to 70°C, with a supply voltage range of 4.5V to 5.5V. This component is suitable for applications in industrial and consumer electronics.
Additional Information
Series: QD2147RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 7.6200 |
| Technology | NMOS |
| Length | 22.8600 |
| Access_Time_Max | 55.0000000000000000 |
| Additional_Feature | AUTOMATIC POWER-DOWN |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-GDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Standby_Voltage_Min | 4.500000 |
| Supply_Current_Max | 180.000000000000000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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