QD2125H-4
Standard SRAM, 1KX1, 35ns, NMOS, CDIP16Manufacturer: Intel
Categories: SRAMs
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Intel QD2125H-4 is a 1024-word x 1-bit asynchronous Static Random-Access Memory (SRAM) featuring NMOS technology. This component offers a maximum access time of 35ns and operates with a supply voltage range of 4.75V to 5.25V, with a nominal of 5V. The memory organization is 1K x 1, and it utilizes 3-state output characteristics. The QD2125H-4 is housed in a 16-lead Ceramic Dual In-line Package (CDIP) with a through-hole termination style and 2.54mm terminal pitch. This device is suitable for applications within industrial and telecommunications sectors requiring reliable, standard memory solutions. The operating temperature range is from 0°C to 75°C.
Additional Information
Series: QD2125RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 19.5580 |
| Width | 7.6200 |
| Technology | NMOS |
| Access_Time_Max | 35.0000000000000000 |
| JESD_30_Code | R-GDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 75.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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