QD2125H-1
Standard SRAM, 1KX1, 20ns, MOS, CDIP16Manufacturer: Intel
Categories: SRAMs
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Intel QD2125H-1 is a standard SRAM device from the QD2125 series, offering a 1K x 1 memory organization. This asynchronous MOS memory features a maximum access time of 20 ns and a 3-state output characteristic. Encased in a 16-lead Ceramic Dual In-line Package (CDIP16) with a 2.54 mm terminal pitch, this through-hole component is suitable for applications requiring reliable, high-speed data storage. Its robust construction and operational parameters make it a choice for industrial control, telecommunications, and legacy system applications. Operating within a temperature range of 0°C to 70°C.
Additional Information
Series: QD2125RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 20.0000000000000000 |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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