QD2115H-4
Standard SRAM, 1KX1, 35ns, NMOS, CDIP16Manufacturer: Intel
Categories: SRAMs
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Intel QD2115H-4 is a standard SRAM memory component from the QD2115 series. This NMOS technology device offers a memory density of 1K x 1 bit, providing 1024 words with a width of 1 bit each. It features an asynchronous operating mode with a maximum access time of 35 nanoseconds. The component utilizes an open-collector output characteristic and an in-line, dual in-line ceramic, glass-sealed package (CDIP16, R-GDIP-T16) with through-hole mounting. Operating within a supply voltage range of 4.75V to 5.25V and an ambient temperature range of 0°C to 75°C, this device is suitable for applications in industrial and military sectors requiring reliable, static random-access memory.
Additional Information
Series: QD2115RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 19.5580 |
| Width | 7.6200 |
| Technology | NMOS |
| Access_Time_Max | 35.0000000000000000 |
| JESD_30_Code | R-GDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 75.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | Open-Collector |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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