PD51C68-30
Standard SRAM, 4KX4, 30ns, CMOS, PDIP20Manufacturer: Intel
Categories: SRAMs
Quality Control: Learn More
Intel PD51C68 series asynchronous SRAM, part number PD51C68-30. This CMOS memory component offers a 16Kbit density organized as 4K words by 4 bits with a maximum access time of 30ns. Features include automatic power-down functionality and 3-state outputs. The PD51C68-30 is housed in a 20-lead PDIP (Plastic Dual In-line Package) with through-hole mounting and a standard 2.54mm terminal pitch. Operating over a temperature range of 0°C to 70°C, it supports a supply voltage of 4.5V to 5.5V. This component is suitable for applications within industrial and consumer electronics sectors.
Additional Information
Series: PD51C68RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 25.5500 |
| Width | 7.6200 |
| Technology | CMOS |
| Access_Time_Max | 30.0000000000000000 |
| Additional_Feature | AUTOMATIC POWER-DOWN |
| JESD_30_Code | R-PDIP-T20 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
PD51C68-35L
Standard SRAM, 4KX4, 35ns, CMOS, PDIP20
PD51C68-35
Standard SRAM, 4KX4, 35ns, CMOS, PDIP20
P2101A-2
Standard SRAM, 256X4, 250ns, MOS, PDIP22