P2114A6
Standard SRAM, 1KX4, 300ns, MOS, PDIP18Manufacturer: Intel
Categories: SRAMs
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Intel P2114A6 is a standard SRAM component with a memory organization of 1KX4, offering a total density of 4 Kilobits. This MOS technology device features a maximum access time of 300 nanoseconds and operates asynchronously. The P2114A6 is housed in an 18-lead PDIP (Plastic Dual In-line Package) with through-hole termination. Its I/O type is common, and the outputs are 3-state. This component is designed for applications requiring reliable static random-access memory, commonly found in industrial control systems, embedded systems, and data acquisition equipment. The operating temperature range is from 0°C to 70°C, with a nominal supply voltage of 5V.
Additional Information
Series: P2114A6RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 300.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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