P2111A-2
Standard SRAM, 256X4, 250ns, MOS, PDIP18Manufacturer: Intel
Categories: SRAMs
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Intel P2111A-2 is a standard synchronous SRAM with a memory organization of 256 words by 4 bits, providing a total density of 1024 bits. This MOS technology component features a maximum access time of 250 nanoseconds and operates asynchronously. The P2111 series memory IC is housed in an 18-lead PDIP package, utilizing through-hole mounting with a terminal pitch of 2.54mm. Its output characteristics are 3-state, and it employs common I/O. This component is designed for applications in the industrial and consumer electronics sectors where reliable, standard memory is required. The operating temperature range is from 0°C to 70°C.
Additional Information
Series: P2111RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 250.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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