P2111A
Standard SRAM, 256X4, 350ns, MOS, PDIP18Manufacturer: Intel
Categories: SRAMs
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Intel P2111A is a standard asynchronous SRAM with a memory organization of 256 words by 4 bits, offering a total density of 1024 bits. This MOS technology component features a maximum access time of 350ns. Designed with a common I/O type and 3-state output characteristics, it operates in the temperature range of 0°C to 70°C. The P2111A is housed in an 18-terminal plastic DIP package with a terminal pitch of 2.54mm, suitable for through-hole mounting. Its parallel interface and standard static RAM functionality make it applicable in various industrial control and embedded systems.
Additional Information
Series: P2111RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 350.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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