MR2147H3/B
Standard SRAM, 4KX1, 55ns, MOS, CQCC18Manufacturer: Intel
Categories: SRAMs
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Intel MR2147H3-B is a standard asynchronous SRAM with a memory organization of 4K x 1. This MOS technology component features a maximum access time of 55ns and operates from a nominal supply voltage of 5V. The device offers a 3-state output characteristic and a separate I/O type. Designed for demanding applications, it operates across a wide temperature range from -55°C to +125°C. The MR2147H3-B is housed in an 18-terminal ceramic chip carrier (CQCC18) package, suitable for surface mounting. This component finds application in industrial, telecommunications, and military systems requiring reliable, high-performance memory solutions. The screening level meets MIL-PRF-38535Q/M, MIL-PRF-38534H, and MIL-STD-883B standards.
Additional Information
Series: MR2147H3RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 55.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XQCC-N18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | QCCN |
| Package_Equivalence_Code | LCC18,.3X.43 |
| Package_Shape | Rectangular |
| Package_Style | CHIP CARRIER |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Standby_Voltage_Min | 4.500000 |
| Supply_Current_Max | 180.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
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