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MR2147H2/B

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MR2147H2/B

Standard SRAM, 4KX1, 45ns, MOS, CQCC18

Manufacturer: Intel

Categories: SRAMs

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Intel MR2147H2-B is a 4096 x 1 bit static random-access memory (SRAM) device utilizing MOS technology. This component features an asynchronous operating mode and a maximum access time of 45 nanoseconds. The memory organization is 4K x 1, providing a total density of 4096 bits. The MR2147H2 series device is housed in an 18-terminal Ceramic Chip Carrier (CQCC18) package with a rectangular shape and quad terminal positioning. It supports a supply voltage of 5V and operates across a temperature range of -55°C to +125°C. This SRAM is suitable for applications requiring high reliability and performance, commonly found in aerospace and defense systems, as well as industrial control equipment. The device offers 3-state outputs and is designed for surface mounting.

Additional Information

Series: MR2147H2RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_Time_Max45.0000000000000000
I_O_TypeSEPARATE
JESD_30_CodeR-XQCC-N18
Memory_Density4096.0000000000000000
Memory_IC_TypeSTANDARD SRAM
Memory_Organization4KX1
Memory_Width1
Number_of_Terminals18
Number_of_Words4096.0000000000000000
Number_of_Words_Code4k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Output_Characteristics3-State
Package_Body_MaterialCeramic
Package_CodeQCCN
Package_Equivalence_CodeLCC18,.3X.43
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Parallel_SerialParallel
Screening_Level_Reference_Standard38535Q/M;38534H;883B
Standby_Voltage_Min4.500000
Supply_Current_Max180.000000000000000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionQUAD

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