MD51C67-55
Standard SRAM, 16KX1, 55ns, CMOS, CDIP20Manufacturer: Intel
Categories: SRAMs
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Intel MD51C67-55 is a 16,384-bit CMOS Static Random Access Memory organized as 16K words by 1 bit. This asynchronous SRAM offers a maximum access time of 55ns. The component features separate I/O and 3-state output characteristics. Operating within a temperature range of -55°C to +125°C, it requires a nominal supply voltage of 5V. The MD51C67-55 is housed in a 20-lead Ceramic Dual In-line Package (CDIP) with through-hole mounting. Its standby current is specified at a maximum of 10mA, with a supply current maximum of 100mA during operation. This memory component is suitable for applications in industrial and military systems requiring reliable, high-performance data storage.
Additional Information
Series: MD51C67RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 55.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T20 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP20,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Standby_Current_Max | 0.010000000000000 |
| Standby_Voltage_Min | 4.500000 |
| Supply_Current_Max | 100.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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