MD2147H-2
Standard SRAM, 4KX1, 45ns, MOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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Intel MD2147H-2 is a standard SRAM component from the MD2147 series, featuring a 4K x 1 memory organization. This MOS technology device offers an access time of 45ns and operates asynchronously with separate I/O. The MD2147H-2 is housed in an 18-lead ceramic dual in-line package (CDIP18) with through-hole termination. Its operating temperature range is -55°C to +125°C, with a nominal supply voltage of 5V. This component is suitable for applications requiring robust memory solutions in demanding environments. It finds application in aerospace, defense, and industrial control systems.
Additional Information
Series: MD2147RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 45.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Standby_Current_Max | 0.030000000000000 |
| Standby_Voltage_Min | 4.500000 |
| Supply_Current_Max | 180.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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