MD2115AL/B
Standard SRAM, 1KX1, 55ns, MOS, CDIP16Manufacturer: Intel
Categories: SRAMs
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The Intel MD2115AL-B is a 1024 x 1 bit standard SRAM with an access time of 55ns. This asynchronous memory component utilizes MOS technology and features an open-drain output characteristic. The memory organization is 1K words by 1 bit, with a total density of 1024 bits. It is housed in a 16-lead ceramic dual in-line package (CDIP16), with through-hole mounting and a terminal pitch of 2.54mm. The operating temperature range is from -55°C to +125°C. This Intel MD2115 series component is suitable for applications requiring reliable static random-access memory, often found in industrial control systems and embedded applications. It adheres to screening levels like 38535Q/M, 38534H, and 883B.
Additional Information
Series: MD2115RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 55.0000000000000000 |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | Open-Drain |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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