MD2115A/B
Standard SRAM, 1KX1, 55ns, MOS, CDIP16Manufacturer: Intel
Categories: SRAMs
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The Intel MD2115A-B is a standard asynchronous SRAM from the MD2115 series. This 1024-word by 1-bit memory device features a maximum access time of 55ns and utilizes MOS technology. The component is housed in a 16-pin ceramic dual in-line package (CDIP16, JESD-30 Code R-XDIP-T16) with through-hole mounting and a terminal pitch of 2.54mm. Operating across a temperature range of -55°C to +125°C, the MD2115A-B offers open-drain output characteristics and is suitable for applications requiring robust memory solutions. This component finds use in various industrial and military sectors.
Additional Information
Series: MD2115RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 55.0000000000000000 |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | Open-Drain |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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