MD2114AL5
Standard SRAM, 1KX4, 250ns, MOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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Intel MD2114AL5 is a 4096-bit MOS static random-access memory (SRAM) organized as 1K words by 4 bits. This asynchronous SRAM features a maximum access time of 250ns and a common I/O type with 3-state outputs. Operating across a wide temperature range from -55°C to +125°C, it utilizes a standard 5V supply voltage. The component is housed in an 18-lead ceramic dual in-line package (CDIP18) with through-hole mounting. Its robust design and performance characteristics make it suitable for applications in industrial automation and data acquisition systems. The parallel interface and reliable MOS technology ensure efficient data handling.
Additional Information
Series: MD2114AL5RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 250.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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