MD2114AL-4
Standard SRAM, 1KX4, 200ns, MOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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Intel MD2114AL-4 is a 4096-bit (1K x 4) standard Static Random-Access Memory (SRAM) device from the MD2114 series. This asynchronous memory operates with a maximum access time of 200 nanoseconds. The component utilizes MOS technology and features a 3-state output. It is housed in a ceramic dual in-line package (CDIP18) with 18 through-hole terminals. The operating temperature range is from -55°C to +125°C, and it requires a nominal supply voltage of 5V. Typical applications for this memory component include industrial control systems, telecommunications infrastructure, and aerospace and defense electronics.
Additional Information
Series: MD2114RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Supply_Current_Max | 50.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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