MD2114AL-3
Standard SRAM, 1KX4, 150ns, MOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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The Intel MD2114AL-3 is a 4096-bit static random-access memory (SRAM) organized as 1K words by 4 bits. This standard SRAM operates asynchronously with a maximum access time of 150 ns and a typical supply voltage of 5V, ranging from 4.5V to 5.5V. It features 3-state outputs and common I/O. Fabricated using MOS technology, the MD2114AL-3 is housed in an 18-lead ceramic dual in-line package (CDIP) with through-hole mounting. Operating across a wide temperature range of -55°C to +125°C, this component is suitable for applications requiring robust memory solutions in harsh environments, including aerospace and defense systems. The package conforms to the R-CDIP-T18 standard.
Additional Information
Series: MD2114RoHS Status: Manufacturer Lead Time: 1Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 150.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-CDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Supply_Current_Max | 50.000000000000000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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