MC2167-10/B
Standard SRAM, 16KX1, 100ns, MOS, CDIP20Manufacturer: Intel
Categories: SRAMs
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Intel MC2167-10-B is a standard SRAM component from the MC2167 series. This memory device features a 16K x 1 organization, delivering a total memory density of 16,384 bits. It operates asynchronously with a maximum access time of 100ns. The component utilizes MOS technology and is housed in a 20-pin Ceramic Dual In-line Package (CDIP) with through-hole termination. Designed for a wide operating temperature range from -55°C to 125°C, it supports a nominal supply voltage of 5V. The I/O type is separate, and the output characteristics are 3-state. This device is suitable for applications in aerospace, defense, and industrial automation systems requiring robust and reliable memory solutions.
Additional Information
Series: MC2167RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 100.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T20 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP20,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Supply_Current_Max | 150.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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