MB5101L-4
Standard SRAM, 256X4, 800ns, CMOS, CDIP22Manufacturer: Intel
Categories: SRAMs
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Intel MB5101L-4 is a standard SRAM with a memory organization of 256 words by 4 bits, offering a total density of 1Kbit. This CMOS component features a maximum access time of 800 ns and operates asynchronously with separate I/O. The MB5101L-4 is housed in a 22-lead ceramic dual in-line package (CDIP22) with through-hole termination. It supports a wide operating temperature range from -55°C to +125°C and requires a nominal supply voltage of 5V. The output characteristics are 3-state, and it exhibits a standby current of 0.2 mA. This component is suitable for applications in industrial and military sectors requiring robust memory solutions.
Additional Information
Series: MB5101RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 800.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T22 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 22 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.4 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Standby_Current_Max | 0.000200000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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