MB5101-4
Standard SRAM, 256X4, 800ns, CMOS, CDIP22Manufacturer: Intel
Categories: SRAMs
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Intel MB5101-4 is a standard CMOS SRAM with a memory organization of 256 words by 4 bits, providing a total memory density of 1 kilobit. This asynchronous SRAM features a maximum access time of 800 nanoseconds and a 3-state output characteristic. The component utilizes CMOS technology and is housed in a 22-lead ceramic dual in-line package (CDIP22), designated by JESD-30 code R-XDIP-T22. Operating across a temperature range of -55°C to +125°C, the MB5101-4 is designed for through-hole mounting with a terminal pitch of 2.54mm. This Intel MB5101 series component finds application in various industrial and consumer electronics requiring reliable, non-volatile data storage.
Additional Information
Series: MB5101RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 800.0000000000000000 |
| JESD_30_Code | R-XDIP-T22 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 22 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.4 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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