M38510/23807BVA
Standard SRAM, 4KX1, 45ns, MOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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Intel M38510/23807 series asynchronous static random-access memory (SRAM) device, part number M38510-23807BVA. This standard SRAM offers a memory density of 4 Kbit, organized as 4K words by 1 bit. Featuring a maximum access time of 45ns, it operates from a supply voltage range of 4.5V to 5.5V. The device is constructed using MOS technology and comes in an 18-lead Ceramic Dual In-line Package (CDIP), identified by JESD-30 code R-GDIP-T18. It is designed for through-hole mounting and operates across a wide temperature range from -55°C to +125°C. This component is typically utilized in demanding applications within aerospace, defense, and industrial sectors requiring high reliability and robust performance. It meets MIL-PRF-38535 Class B screening levels.
Additional Information
Series: M38510/23807RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 45.0000000000000000 |
| JESD_30_Code | R-GDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-PRF-38535 Class B |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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