M2147H-2
Standard SRAM, 4KX1, 45ns, HMOSManufacturer: Intel
Categories: SRAMs
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Intel M2147H-2 is a standard SRAM component from the M2147 series. This asynchronous memory device offers a density of 4K words with a 1-bit organization (4KX1). It features a maximum access time of 45ns and operates using HMOS technology. The M2147H-2 supports a wide operating temperature range from -55°C to 125°C and requires a supply voltage between 4.5V and 5.5V, with a nominal voltage of 5V. This through-hole component is housed in an 18-terminal DIP package (JESD-30 Code: R-XDIP-T18). Applications for this memory device can be found in industrial and telecommunications equipment.
Additional Information
Series: M2147RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | HMOS |
| Access_Time_Max | 45.0000000000000000 |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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