LD2147HL
Standard SRAM, 4KX1, 70ns, MOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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Intel LD2147HL is a standard asynchronous SRAM with a memory organization of 4K words by 1 bit, totaling 4096 bits of data storage. This MOS technology component features a maximum access time of 70ns and operates with separate I/O. The Intel LD2147 series component utilizes a 3-state output characteristic. Housed in an 18-terminal ceramic dual in-line package (CDIP18), it supports through-hole mounting with a terminal pitch of 2.54mm. The device operates within a temperature range of -40°C to 85°C and requires a nominal supply voltage of 5V, with a minimum standby voltage of 4.50V. Maximum supply current is rated at 140mA. This component is suitable for applications in industrial and consumer electronics where reliable static memory is required.
Additional Information
Series: LD2147RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 70.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Standby_Voltage_Min | 4.500000 |
| Supply_Current_Max | 140.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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