LD2147H3
Standard SRAM, 4KX1, 55ns, MOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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Intel LD2147H3 is a standard asynchronous SRAM with a memory density of 4K words by 1 bit, organized as 4KX1. This MOS technology component features a maximum access time of 55ns and operates with separate I/O. The LD2147H3 is housed in an 18-lead ceramic dual in-line package (CDIP18) with through-hole mounting. It supports a supply voltage of 5V nominal and operates within a temperature range of -40°C to 85°C. Key electrical characteristics include a maximum supply current of 180mA and 3-state output capability. This component is suitable for applications in industrial control and legacy systems.
Additional Information
Series: LD2147H3RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 55.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Standby_Voltage_Min | 4.500000 |
| Supply_Current_Max | 180.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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