JD2147H03
Standard SRAM, 4KX1, 70ns, MOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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Intel JD2147H03 is a standard asynchronous SRAM with a memory organization of 4K words by 1 bit. This component features a maximum access time of 70ns and operates using MOS technology. The JD2147H03 is housed in an 18-lead ceramic dual in-line package (CDIP18), designed for through-hole mounting with a terminal pitch of 2.54mm. It offers separate input/output and 3-state output characteristics. Operating across a temperature range of -55°C to +125°C, this device requires a nominal supply voltage of 5V and has a standby voltage minimum of 4.50V. Typical applications for this component include aerospace, defense, and industrial systems requiring robust memory solutions.
Additional Information
Series: JD2147H03RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 70.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Standby_Voltage_Min | 4.500000 |
| Supply_Current_Max | 180.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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