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IS64WV2568EDBLL-10BA1

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IS64WV2568EDBLL-10BA1

Standard SRAM, 256KX8, 10ns, CMOS, PBGA36

Manufacturer: Intel

Categories: SRAMs

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The Intel IS64WV2568EDBLL-10BA1 is a 256K x 8 standard asynchronous SRAM featuring a 10ns maximum access time. This CMOS device operates with a nominal supply voltage of 3V and supports a wide temperature range from -40°C to 85°C, meeting AEC-Q100 requirements. The memory organization is 256K words by 8 bits, providing a total density of 2,097,152 bits. It utilizes a 36-ball Fine Pitch Ball Grid Array (FBGA) package with a 0.75mm terminal pitch, designed for surface mounting. Key specifications include a standby current of 6mA and a supply current of 50mA. This component is suitable for applications in automotive and industrial control systems requiring reliable, high-speed memory.

Additional Information

Series: IS64WV2568RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Width6.0000
TechnologyCMOS
Length8.0000
Access_Time_Max10.0000000000000000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B36
Memory_Density2097152.0000000000000000
Memory_IC_TypeSTANDARD SRAM
Memory_Organization256KX8
Memory_Width8
Number_of_Terminals36
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeFBGA
Package_Equivalence_CodeBGA36,6X8,30
Package_ShapeRectangular
Package_StyleGRID ARRAY, FINE PITCH
Parallel_SerialParallel
Screening_Level_Reference_StandardAEC-Q100
Standby_Current_Max0.006000000000000
Standby_Voltage_Min2.000000
Supply_Current_Max50.000000000000000
Supply_Voltage_Nom3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.750
Terminal_PositionBottom

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