D2147H3
Standard SRAM, 4KX1, 55ns, MOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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Intel D2147H3 is a standard asynchronous SRAM with a density of 4096 bits organized as 4K words by 1 bit. This MOS technology component features a maximum access time of 55 nanoseconds. The D2147H3 utilizes separate I/O and offers 3-state output characteristics. It operates from a nominal supply voltage of 5V, with a minimum standby voltage of 4.50V and a maximum supply current of 180mA. The operating temperature range is from 0.0°C to 70.0°C. This component is housed in a ceramic DIP18 package with through-hole mounting and a terminal pitch of 2.54mm. Applications for this component can be found in industrial and consumer electronics where reliable data storage is required.
Additional Information
Series: D2147H3RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 55.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Standby_Voltage_Min | 4.500000 |
| Supply_Current_Max | 180.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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