D2147
Standard SRAM, 4KX1, 70ns, MOS, CDIP18Manufacturer: Intel
Categories: SRAMs
Quality Control: Learn More
Intel D2147 is a standard asynchronous SRAM with a memory organization of 4K x 1, offering a total density of 4096 bits. This MOS technology component features a maximum access time of 70ns and operates with separate I/O. The Intel D2147 utilizes a 5V supply voltage and is housed in an 18-lead ceramic dual in-line package (CDIP18) with through-hole mounting. Its output characteristics are 3-state, and it has a standby current of 160mA. This component is suitable for applications in industrial and telecommunications equipment.
Additional Information
Series: D2147RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 70.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Standby_Voltage_Min | 4.500000 |
| Supply_Current_Max | 160.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
D2147L
Standard SRAM, 4KX1, 70ns, MOS, CDIP18
D2147A
Standard SRAM, 4KX1, 70ns, MOS, CDIP18
D2147H-2
Standard SRAM, 4KX1, 45ns, MOS, CDIP18