D2115H-3
Standard SRAM, 1KX1, 30ns, MOS, CDIP16Manufacturer: Intel
Categories: SRAMs
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Intel D2115 series asynchronous SRAM, part number D2115H-3, offers a 1K x 1 memory organization with a maximum access time of 30ns. This MOS technology component features a 16-pin CDIP (Ceramic Dual In-line Package) with through-hole termination. The open-drain output characteristics and standard SRAM memory IC type are suitable for applications requiring reliable data storage. This component finds utility in industrial control systems, telecommunications infrastructure, and legacy computing platforms. The D2115H-3 operates within a temperature range of 0°C to 70°C.
Additional Information
Series: D2115RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 30.0000000000000000 |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | Open-Drain |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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