D2114-2
Standard SRAM, 1KX4, 200ns, MOS, CDIP18Manufacturer: Intel
Categories: SRAMs
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Intel D2114-2 is a 4096-bit static random-access memory (SRAM) organized as 1K words by 4 bits. This asynchronous MOS SRAM features a maximum access time of 200ns and operates with a nominal supply voltage of 5V. The component utilizes a common I/O type with 3-state outputs and is housed in an 18-lead ceramic dual in-line package (CDIP18). Its through-hole mounting terminal form and 2.54mm terminal pitch are suitable for robust board-level integration. The D2114-2 is designed for applications requiring standard memory solutions, often found in industrial control systems and legacy equipment.
Additional Information
Series: D2114RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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