5962-8552507ZX
Standard SRAM, 8KX8, 35ns, CMOS, CDIP28Manufacturer: Intel
Categories: SRAMs
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Intel’s 5962-8552507ZX is a high-speed CMOS static random-access memory (SRAM) device organized as 8K words by 8 bits, offering a total density of 64K bits. This asynchronous SRAM features a maximum access time of 35 nanoseconds, ensuring rapid data retrieval. Operating across a wide temperature range from -55°C to +125°C, it is designed for demanding applications. The component utilizes a 28-lead ceramic dual in-line package (CDIP) with through-hole mounting, specified by JESD-30 Code R-GDIP-T28. Its robust construction and performance characteristics make it suitable for use in industrial, military, and aerospace systems where reliability under extreme conditions is paramount. The supply voltage range is 4.5V to 5.5V, with a nominal requirement of 5V.
Additional Information
Series: 5962-8552507RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 37.2110 |
| Width | 7.6200 |
| Technology | CMOS |
| Access_Time_Max | 35.0000000000000000 |
| JESD_30_Code | R-GDIP-T28 |
| Memory_Density | 65536.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 8KX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 28 |
| Number_of_Words | 8192.0000000000000000 |
| Number_of_Words_Code | 8k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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