2004-2
Non-Volatile SRAM, 512X8, 200ns, CMOSManufacturer: Intel
Categories: SRAMs
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The Intel 2004-2 is a Non-Volatile SRAM with a memory organization of 512 words by 8 bits, offering a total density of 4 Kbits. This CMOS component features an asynchronous parallel interface and a maximum access time of 200ns. It supports a low power standby mode and provides a 10-year data retention capability for stored data. Operating within a supply voltage range of 4.75V to 5.25V, it is designed for applications requiring persistent data storage without the need for continuous power. Typical operating temperatures range from 0°C to 70°C. This component finds application in various industrial and consumer electronics where data integrity and non-volatility are critical.
Additional Information
Series: 2004RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 200.0000000000000000 |
| Additional_Feature | LOW POWER STANDBY MODE; 10-YEAR DATA RETENTION FOR EACH STORE |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | NON-VOLATILE SRAM |
| Memory_Organization | 512X8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Words | 512.0000000000000000 |
| Number_of_Words_Code | 512 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
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