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MD2114AL3

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MD2114AL3

IC SRAM 4KBIT PARALLEL 18CDIP

Manufacturer: Intel

Categories: Memory

Quality Control: Learn More

The Intel M2114A series asynchronous SRAM, part number MD2114AL3, offers 4Kbit of memory organized as 1K x 4. This component features a parallel interface with an access time of 150 ns and a write cycle time of 150 ns. Operating within a voltage range of 4.5V to 5.5V, this volatile memory is designed for robust performance across an industrial temperature range of -55°C to 125°C. The MD2114AL3 is housed in an 18-CDIP package, suitable for through-hole mounting. This device finds application in industrial control systems, telecommunications infrastructure, and legacy computing platforms where reliable, asynchronous SRAM is a critical requirement.

Additional Information

Series: M2114ARoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case18-CDIP
Mounting TypeThrough Hole
Memory Size4Kbit
Memory TypeVolatile
Operating Temperature-55°C ~ 125°C (TA)
Voltage - Supply4.5V ~ 5.5V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package18-CDIP
Write Cycle Time - Word, Page150ns
Memory InterfaceParallel
Access Time150 ns
Memory Organization1K x 4
ProgrammableNot Verified

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