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TE28F160F3B120

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TE28F160F3B120

Flash, 1MX16, 120ns, PDSO56

Manufacturer: Intel

Categories: Flash Memories

Quality Control: Learn More

Intel TE28F160F3B120 is a 16 Mbit NOR Flash memory device organized as 1M words by 16 bits. Featuring a guaranteed minimum of 100,000 block erase cycles and a bottom boot block architecture, this component offers a 120ns access time. The device operates within a supply voltage range of 2.7V to 3.6V, with a nominal 3V supply. Its memory organization supports page programming with a 4-page size and sector erase capabilities including 4KB and 32KB sectors. The TE28F160F3B120 is housed in a 56-lead TSOP package with a 0.50mm terminal pitch. This Flash memory is suitable for applications in industrial controls, telecommunications, and consumer electronics.

Additional Information

Series: TE28F160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4000
TypeNOR TYPE
Width14.0000
TechnologyCMOS
Access_Time_Max120.0000000000000000
Additional_FeatureMIN 100,000 BLOCK ERASE CYCLES; BOTTOM BOOT BLOCK
Boot_BlockBottom
Command_User_InterfaceYes
Data_PollingNo
JESD_30_CodeR-PDSO-G56
Memory_Density16777216.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Sectors_Size8,31
Number_of_Terminals56
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP1
Package_Equivalence_CodeTSSOP56,.8,20
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Page_Size4
Parallel_SerialParallel
Programming_Voltage2.7
Seated_Height_Max1.2000
Sector_Size4K,32K
Standby_Current_Max0.000075000000000
Supply_Current_Max60.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min2.70000
Supply_Voltage_Nom3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.500
Terminal_PositionDual
Toggle_BitNo

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