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TE28F160B3B110

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TE28F160B3B110

Flash, 1MX16, 110ns, PDSO48

Manufacturer: Intel

Categories: Flash Memories

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The Intel TE28F160B3B110 is a 16 Megabit NOR Flash memory device offering 1Mx16 organization with an asynchronous operating mode and a 110ns access time. This component features a user-selectable 12V VPP for programming and supports bottom boot block configuration. Its command user interface facilitates efficient operation. The device operates from a 2.7V to 3.6V supply voltage range. Packaged in a 48-lead TSOP1 (JESD30 code R-PDSO-G48), it is suitable for surface-mount applications with a 0.50mm terminal pitch. This Flash memory is utilized in industrial control, automotive systems, and consumer electronics where reliable non-volatile storage is critical. It offers a memory density of 16,777,216 bits organized into 1,048,576 words.

Additional Information

Series: TE28F160RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TypeNOR TYPE
Width12.0000
TechnologyMOS
Length18.4000
Access_Time_Max110.0000000000000000
Additional_FeatureUSER-SELECTABLE 12V VPP; BOTTOM BOOT BLOCK
Boot_BlockBottom
Command_User_InterfaceYes
Data_PollingNo
JESD_30_CodeR-PDSO-G48
Memory_Density16777216.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Sectors_Size8,31
Number_of_Terminals48
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP1
Package_Equivalence_CodeTSSOP48,.8,20
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Programming_Voltage2.7
Seated_Height_Max1.2000
Sector_Size4K,32K
Standby_Current_Max0.000005000000000
Supply_Current_Max35.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min2.70000
Supply_Voltage_Nom3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.500
Terminal_PositionDual
Toggle_BitNo

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