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GE28F640W30BD70A

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GE28F640W30BD70A

Flash, 4MX16, 70ns, PBGA56

Manufacturer: Intel

Categories: Flash Memories

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Intel GE28F640W30BD70A is a 64-Mbit NOR Flash memory organized as 4M words by 16 bits, offering a 70ns asynchronous access time. This component supports a single 1.8V programming voltage and operates within a supply voltage range of 1.7V to 1.9V. It features synchronous burst mode operation in addition to its asynchronous mode. The memory utilizes a bottom boot block architecture and is housed in a 56-ball PBGA (R-PBGA-B56) package with a 0.75mm terminal pitch. Operating temperature spans from -40°C to +85°C. Applications for this memory technology are found in industrial, automotive, and consumer electronics sectors.

Additional Information

Series: GE28F640RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length9.0000
TypeNOR TYPE
Width7.7000
TechnologyCMOS
Access_Time_Max70.0000000000000000
Additional_FeatureSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
Boot_BlockBottom
JESD_30_CodeR-PBGA-B56
Memory_Density67108864.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization4MX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals56
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeVFBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel_SerialParallel
Programming_Voltage1.8
Seated_Height_Max1.0000
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.750
Terminal_PositionBottom

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