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GE28F640W18BD60B

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GE28F640W18BD60B

Flash, 4MX16, 60ns, PBGA56

Manufacturer: Intel

Categories: Flash Memories

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Intel GE28F640W18BD60B is a 64-Mbit NOR Flash memory organized as 4M words by 16 bits. This device features a 60 ns asynchronous access time and supports synchronous burst mode operation. The memory density is 67,108,864 bits, with 4,194,304 words. Operating from a 1.7 V to 1.95 V supply voltage range, it requires a 1.8 V programming voltage. The GE28F640 series component is housed in a 56-lead R-PBGA (Very Thin Profile, Fine Pitch Grid Array) package with a 0.75 mm terminal pitch. It supports bottom boot block configurations and is designed for surface mounting. This device is suitable for applications in industrial, automotive, and telecommunications sectors requiring high-density, non-volatile storage with fast read access. The operating temperature range is -40°C to +85°C.

Additional Information

Series: GE28F640RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length9.0000
TypeNOR TYPE
Width7.7000
TechnologyCMOS
Access_Time_Max60.0000000000000000
Additional_FeatureSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
Boot_BlockBottom
JESD_30_CodeR-PBGA-B56
Memory_Density67108864.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization4MX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals56
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeVFBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel_SerialParallel
Programming_Voltage1.8
Seated_Height_Max1.0000
Supply_Voltage_Max1.95000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.750
Terminal_PositionBottom

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