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GE28F128W30BD70A

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GE28F128W30BD70A

Flash, 8MX16, 70ns, PBGA56

Manufacturer: Intel

Categories: Flash Memories

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Intel GE28F128W30BD70A is a 128 Mbit NOR Flash memory device organized as 8M words by 16 bits. This component offers a 70ns asynchronous access time and supports synchronous burst mode operation. It operates from a 1.7V to 1.9V supply voltage range with a nominal 1.8V. The GE28F128 series memory features a bottom boot block architecture and is housed in a 56-pin PBGA package with a 0.75mm terminal pitch. This device is designed for high-performance applications in industries such as industrial automation, networking, and embedded systems. Its robust CMOS technology ensures reliable operation across a -40°C to +85°C temperature range.

Additional Information

Series: GE28F128RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length11.0000
TypeNOR TYPE
Width9.0000
TechnologyCMOS
Access_Time_Max70.0000000000000000
Additional_FeatureSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
Boot_BlockBottom
JESD_30_CodeR-PBGA-B56
Memory_Density134217728.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization8MX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals56
Number_of_Words8388608.0000000000000000
Number_of_Words_Code8M
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeVFBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel_SerialParallel
Programming_Voltage1.8
Seated_Height_Max1.0000
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.750
Terminal_PositionBottom

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