QD27210-170V05
UVPROM, 64KX16, 170ns, MOS, CDIP40Manufacturer: Intel
Categories: EPROMs
Quality Control: Learn More
Intel QD27210-170V05 is a 65,536 word by 16-bit UV Erasable Programmable Read-Only Memory (UVPROM) component. This MOS technology device offers an asynchronous operating mode with a maximum access time of 170 nanoseconds. The memory organization is 64K x 16, providing a total density of 1,048,576 bits. It features common I/O and 3-state output characteristics, designed for parallel data transfer. The component operates from a nominal 5V supply voltage and has a maximum supply current of 200mA. Encased in a 40-terminal ceramic dual in-line package (CDIP40) with through-hole mounting, it is suitable for applications requiring non-volatile program storage in industrial and consumer electronics. Operating temperature range is 0°C to 70°C.
Additional Information
Series: QD27210RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 170.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-XDIP-T40 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | UVPROM |
| Memory_Organization | 64KX16 |
| Memory_Width | 16 |
| Number_of_Terminals | 40 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP40,.6 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Current_Max | 200.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
QD27210-200V05
UVPROM, 64KX16, 200ns, MOS, CDIP40
QD27210-200V10
UVPROM, 64KX16, 200ns, MOS, CDIP40
QD27210-250V05
UVPROM, 64KX16, 250ns, MOS, CDIP40