Z21464-08
Page Mode DRAM, 64KX4, 80ns, MOS, PZIP20Manufacturer: Intel
Categories: DRAMs
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Intel Z21464-08 is a 64K x 4-bit page mode Dynamic Random Access Memory (DRAM) component. This MOS technology device features an 80ns maximum access time and operates asynchronously with a common I/O type. It supports RAS Only, CAS Before RAS, and Hidden Refresh modes, with 256 refresh cycles. The component is housed in a 20-terminal Plastic ZIP (PZIP20) package, designed for through-hole mounting. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage of 5V ±10%. The Intel Z21464 series DRAM is suitable for applications in computing and industrial control systems.
Additional Information
Series: Z21464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 3.0000 |
| Technology | MOS |
| Length | 26.1620 |
| Access_Mode | PAGE |
| Access_Time_Max | 80.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I_O_Type | COMMON |
| JESD_30_Code | R-PZIP-T20 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | ZIP |
| Package_Equivalence_Code | ZIP20,.1 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 10.1600 |
| Supply_Current_Max | 65.000000000000000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 1.270 |
| Terminal_Position | ZIG-ZAG |
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